With the rise of mobile phone fast charging, electric vehicles, brushless motors and lithium batteries, the demand for medium-voltage MOSFETs is increasing, and medium-voltage power devices are beginning to flourish. Due to its huge market share, many domestic and foreign manufacturers have widely used related devices in motor drive systems, inverter systems and power management systems, and are core power control components.

As an important power semiconductor device, SGT MOSFET is widely used in PD fast charging, motor drive (Motor driver), battery management system (BMS), power tools and other fields. Single-tube SGT MOSFET: VBGL7103  has the advantages of low on-resistance and low gate charge, which can improve power density, reduce losses, and have better EMI advantages.

1. Low on-resistance, effectively reducing losses

VBGL7103 adopts a unique SGT (shielded gate trench) process design, which makes the switching loss much smaller than that of ordinary trenches. It has a depth 3-5 times deeper than ordinary trenches. It not only introduces horizontal depletion on the basis of vertical depletion of PN junctions of traditional trench MOSFET devices, but also uses more epitaxial volume to block voltage.

2. Outstanding power and energy consumption performance

Due to the 3-5 times deeper trench excavation depth, SGT MOSFET can use more epitaxial volume laterally to block voltage, which greatly reduces the on-resistance.

3. Reduce switching loss

The low Qg characteristics of SGT technology combined with the application of shielded gate structure make the Miller capacitance CGD of VBGL7103 MOSFET several times lower than that of traditional devices, greatly reducing the switching loss in switching power supply applications and improving the overall efficiency. In addition, its lower CGD/CGS ratio also further optimizes the performance.

4. EMI advantages and EAS capabilities

The VBGL7103  MOSFET, with its deeper trench in the SGT structure, can more effectively use the volume of crystalline silicon to absorb EAS energy, making it perform better during avalanche and reliably withstand avalanche breakdown and surge current. In addition, CD-shield and Rshield in the SGT structure can absorb the spikes and oscillations caused by dv/dt changes when the device is turned off, further reducing the risk in the application.

Parameter characteristics:

VDS (drain-source voltage): 100V

Vgs (gate-source voltage): 20V

ID (drain current): 180A

Rds(on) (on resistance):

At 10V: 0.003Ω

At 4.5V: 0.005Ω

VBGL7103  MOSFET adopts TO-263-7L package, which has the following advantages:

1. Excellent heat dissipation performance: With a large area of heat dissipation contact, the heat generated by the device can be more effectively transferred to the heat sink or radiator, improving the heat dissipation efficiency and ensuring the stable performance of the device under high load.

2. Easy to install: The package structure is compact and the pin arrangement is reasonable, which is convenient for welding and installation, while reducing the risk of misoperation during installation and improving production efficiency.

3. Good electrical characteristics: Considering factors such as electrical grounding and impedance matching, it can provide good electrical performance, reduce crosstalk and interference in the circuit, and ensure stable and reliable signal transmission.

4. High mechanical strength: Made of high-temperature resistant materials, it has high mechanical strength and environmental resistance, and can adapt to various harsh working environment conditions.

Application areas:

Motor drive system: In motor drive, VBGL7103 can stably and efficiently control current and provide excellent performance.

Inverter system: As a key switching device, it can achieve efficient energy conversion in the inverter system.

Power management system: In power management, VBGL7103 can provide reliable power control to ensure stable operation of the system.