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| Type | Description |
|---|---|
| Series: | OptiMOS™ |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 51 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5300 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 94W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO251-3 |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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|---|---|---|---|
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VN3205N8-GRoving Networks / Microchip Technology |
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IPB054N06 - 12V-300V N-CHANNEL P |
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IRFR014TRPBFVishay / Siliconix |
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STW26NM60NDSTMicroelectronics |
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IPA50R350CPXKSA1IR (Infineon Technologies) |
10A, 500V, 0.35OHM, N-CHANNEL, |
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BSS126IXTSA1IR (Infineon Technologies) |
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IPI024N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262-3 |
In Stock: 486 $3.15000 |
