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| Type | Description |
|---|---|
| Series: | GigaMOS™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 11mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs: | 265 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 19600 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1150W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-264AA (IXFK) |
| Package / Case: | TO-264-3, TO-264AA |
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|---|---|---|---|
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HUF75333S3ST |
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TK25S06N1L,LXHQToshiba Electronic Devices and Storage Corporation |
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IXFN90N85XWickmann / Littelfuse |
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HUFA75645S3SFairchild (ON Semiconductor) |
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DN3145N8-GRoving Networks / Microchip Technology |
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IRF830STRLPBFVishay / Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |
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FDPF8N50NZUSanyo Semiconductor/ON Semiconductor |
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In Stock: 177,718,000 $1.48000 |
