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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 4.3mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9900 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 338W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SIR696DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 125V 60A PPAK SO-8 |
In Stock: 2,141 $1.42000 |
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IXFR64N50Q3Wickmann / Littelfuse |
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TK8A60DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7.5A TO220SIS |
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FDP8442-F085Fairchild (ON Semiconductor) |
23A, 40V, 0.0031OHM, N-CHANNEL, |
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STD120N4F6STMicroelectronics |
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SISS72DN-T1-GE3Vishay / Siliconix |
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PMN120ENEXNexperia |
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MOSFET N-CH 40V 60A PPAK SO-8 |
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BUZ76 |
N-CHANNEL POWER MOSFET |
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