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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 11.9mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9.3 nC @ 4.5 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 760 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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|---|---|---|---|
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MOSFET N-CH 60V 8A PPAK1212-8 |
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7A, 500V, 0.52OHM, N-CHANNEL, M |
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MOSFET P-CH 20V 30A/50A 8DFN |
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MOSFET P-CH 60V 120A TO220AB |
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RZF020P01TLROHM Semiconductor |
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N-CHANNEL POWER MOSFET |
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In Stock: 0 $0.59952 |
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FQU8P10TUSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6.6A IPAK |
In Stock: 126,220,160 $0.79000 |
