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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 8V |
| Rds On (Max) @ Id, Vgs: | 312mOhm @ 5A, 8V |
| Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9.6 nC @ 8 V |
| Vgs (Max): | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds: | 760 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 21W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 3-PQFN (8x8) |
| Package / Case: | 3-PowerDFN |
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