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| Type | Description |
|---|---|
| Series: | DeepGATE™, STripFET™ VI |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 160mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 6.4 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 340 pF @ 48 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.6W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-223 |
| Package / Case: | TO-261-4, TO-261AA |
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|---|---|---|---|
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APT34F60S/TRRoving Networks / Microchip Technology |
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2SK2729-ERenesas Electronics America |
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UF3C170400K3SUnitedSiC |
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HUF75542P3Sanyo Semiconductor/ON Semiconductor |
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SCT3022ALHRC11ROHM Semiconductor |
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RM8N700IPRectron USA |
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