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| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 1.75A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 78mOhm @ 1.8A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 31.1 nC @ 8 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 965 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 330mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SC-89-6 |
| Package / Case: | SOT-563, SOT-666 |
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|---|---|---|---|
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IXFH60N50P3Wickmann / Littelfuse |
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BSC050N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 18A/85A TDSON |
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IXTY26P10TWickmann / Littelfuse |
MOSFET P-CH 100V 26A TO252 |
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ZXM64P03XTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.8A 8MSOP |
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IPB180N06S4H1ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 180A TO263-7 |
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FDP039N08B-F102Fairchild (ON Semiconductor) |
MOSFET N-CH 80V 120A TO220-3 |
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NTMFS4936NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.6A/79A 5DFN |
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SIR140DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 71.9A/100A PPAK |
In Stock: 5,806 $2.28000 |
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IPB60R090CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 25A TO263-3-2 |
In Stock: 0 $5.64000 |
