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| Type | Description |
|---|---|
| Series: | SIPMOS® |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 120mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 45Ohm @ 120mA, 10V |
| Vgs(th) (Max) @ Id: | 2.3V @ 94µA |
| Gate Charge (Qg) (Max) @ Vgs: | 6.6 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 150 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.8W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-SOT223-4 |
| Package / Case: | TO-261-4, TO-261AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IPA65R600E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-FP |
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AUIRL2203NInternational Components Corp. |
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STP3NK50ZSTMicroelectronics |
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MOSFET N-CH 150V 21A TO252-3 |
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