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| Type | Description |
|---|---|
| Series: | QFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250 V |
| Current - Continuous Drain (Id) @ 25°C: | 15.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 270mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 53.5 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1.08 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.13W (Ta), 139W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I2PAK (TO-262) |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|---|---|---|---|
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IPP50R399CPIR (Infineon Technologies) |
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SI1469DH-T1-BE3Vishay / Siliconix |
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PFET, 120A I(D), 40V, 0.0023OHM, |
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N-CH MOSFET 50V 0.34A SOT-23-3L |
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MOSFET N-CH 100V 20A TO252AA |
In Stock: 46,400 $0.70000 |
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POWER FIELD-EFFECT TRANSISTOR, 1 |
In Stock: 90 $1.93000 |
