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| Type | Description |
|---|---|
| Series: | HiPerFET™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500 V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 140mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id: | 6.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs: | 93 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4800 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 830W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-268 |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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|---|---|---|---|
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TPH4R003NL,L1QToshiba Electronic Devices and Storage Corporation |
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APT10026L2FLLGRoving Networks / Microchip Technology |
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NVR1P02T1GSanyo Semiconductor/ON Semiconductor |
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STF8N80K5STMicroelectronics |
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IRF3709ZPBFInternational Components Corp. |
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IPP60R280C6XKSA1IR (Infineon Technologies) |
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IXFA230N075T2-7Wickmann / Littelfuse |
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IXTA1R4N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 1.4A TO263 |
In Stock: 1,500 $1.93600 |
