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TSM60NB190CZ C0G

TSM60NB190CZ C0G

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Manufacturer Part
TSM60NB190CZ C0G
Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CHANNEL 600V 18A TO220
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - Single
Series
-
InStock
3953
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1273 pF @ 100 V
FET Feature:-
Power Dissipation (Max):33.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3

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