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| Type | Description |
|---|---|
| Series: | QFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 16.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 63mOhm @ 8.4A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 590 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I-PAK |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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|---|---|---|---|
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AOTF600A70LAlpha and Omega Semiconductor, Inc. |
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TK14G65W5,RQToshiba Electronic Devices and Storage Corporation |
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DKI04035Sanken Electric Co., Ltd. |
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In Stock: 0 $0.23925 |
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FDS6680Fairchild (ON Semiconductor) |
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