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| Type | Description |
|---|---|
| Series: | QFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800 V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 5Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 690 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.13W (Ta), 107W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I2PAK (TO-262) |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|---|---|---|---|
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IRF7455TRPBFIR (Infineon Technologies) |
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DMTH4004LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO252-4L |
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IPP042N03LG |
IPP042N03 - 12V-300V N-CHANNEL P |
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STFI260N6F6STMicroelectronics |
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ZXMP10A18KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 3.8A TO252-3 |
In Stock: 15,703 $1.45000 |
