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| Type | Description |
|---|---|
| Series: | MOSFET™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 86A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 13mOhm @ 43A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 70 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2250 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 300W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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RM5N800HDRectron USA |
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In Stock: 0 $0.57000 |
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FQD8P10TMSanyo Semiconductor/ON Semiconductor |
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In Stock: 0 $0.71000 |
