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| Type | Description |
|---|---|
| Series: | QFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800 V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 4.8Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 16.5 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 705 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 39W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220F-3 (Y-Forming) |
| Package / Case: | TO-220-3 Full Pack, Formed Leads |
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|---|---|---|---|
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FDD068AN03LFairchild (ON Semiconductor) |
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SMALL SIGNAL FIELD-EFFECT TRANSI |
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AOTF11S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 11A TO220-3F |
In Stock: 0 $2.65000 |
