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| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 12.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 73mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.4 nC @ 5 V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 434 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 31W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | LFPAK33 |
| Package / Case: | SOT-1210, 8-LFPAK33 |
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|---|---|---|---|
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AOD4189Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 40A TO252 |
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TPS1101DTexas Instruments |
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FDZ7064ASFairchild (ON Semiconductor) |
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IPP076N12N3GIR (Infineon Technologies) |
IPP076N12 - 12V-300V N-CHANNEL P |
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RSR015P06HZGTLROHM Semiconductor |
MOSFET P-CH 60V 1.5A TSMT3 |
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SPP80N06S2L-11IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
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ZDS020N60TBROHM Semiconductor |
MOSFET N-CH 600V 630MA 8SOP |
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IPB230N06L3GIR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
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SIA447DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 12A PPAK SC70-6 |
In Stock: 1,666 $0.51000 |
