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| Type | Description |
|---|---|
| Series: | CoolMOS™ C7 |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 180mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs: | 24 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1080 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 68W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO220-3-1 |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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FDD4685Sanyo Semiconductor/ON Semiconductor |
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RF N-CHANNEL, JUNCTION FET |
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PMV100XPEARNexperia |
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TK42E12N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 120V 88A TO-220 |
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IRLU2905PBFIR (Infineon Technologies) |
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NTMFS4H01NT3GSanyo Semiconductor/ON Semiconductor |
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STD95N2LH5STMicroelectronics |
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BUZ111SLE3045A |
MOSFET N-CH 50V 80A TO263 |
In Stock: 2,000 $0.78000 |
