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| Type | Description |
|---|---|
| Series: | TrenchMOS™ |
| Package: | Bulk |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 34mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 13.1 nC @ 10 V |
| Vgs (Max): | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 500 pF @ 20 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.75W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-TSOP |
| Package / Case: | SC-74, SOT-457 |
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|---|---|---|---|
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TK100E10N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 100A TO220 |
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