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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
| Rds On (Max) @ Id, Vgs: | 200mOhm @ 4.6A, 5V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.4 nC @ 5 V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 400 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D-Pak |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|---|---|---|---|
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IPB029N06N3GE8187ATMA1IR (Infineon Technologies) |
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SI2316BDS-T1-GE3Vishay / Siliconix |
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In Stock: 19 $1.05000 |
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RM3010S6Rectron USA |
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In Stock: 0 $0.06400 |
