Type | Description |
---|---|
Series: | MDmesh™ M2 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 330mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 770 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
PSMN1R7-40YLDXNexperia |
MOSFET N-CH 40V 200A LFPAK56 |
In Stock: 1,488 $1.32000 |
![]() |
STB3N62K3STMicroelectronics |
MOSFET N-CH 620V 2.7A D2PAK |
In Stock: 0 $1.51000 |
![]() |
SPA07N65C3XKSA1IR (Infineon Technologies) |
POWER FIELD-EFFECT TRANSISTOR, 7 |
In Stock: 8,500 $0.95000 |
![]() |
IPW60R145CFD7XKSA1IR (Infineon Technologies) |
MOSFET HIGH POWER |
In Stock: 228 $4.49000 |
![]() |
IPDD60R190G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A HDSOP-10 |
In Stock: 303 $3.04000 |
![]() |
FDD5N50TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A DPAK |
In Stock: 202 $1.03000 |
![]() |
FDS6679ZFairchild (ON Semiconductor) |
MOSFET P-CH 30V 13A 8SOIC |
In Stock: 304,434 $0.73000 |
![]() |
BSC080P03LSGAUMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 16A/30A TDSON-8 |
In Stock: 9,009 $2.04000 |
![]() |
IRFS4310PBFInternational Components Corp. |
MOSFET N-CH 100V 130A D2PAK |
In Stock: 110 $2.61000 |
![]() |
SIHP22N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
In Stock: 0 $2.23300 |