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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 7mOhm @ 16A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 6.5 nC @ 5 V |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 685 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IRFR430BTFFairchild (ON Semiconductor) |
N-CHANNEL POWER MOSFET |
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IRLS4030PBFInternational Components Corp. |
MOSFET N-CH 100V 180A D2PAK |
In Stock: 0 $2.01000 |
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IPA90R1K2C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 5.1A TO220-FP |
In Stock: 0 $0.68000 |
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FDPF041N06BL1Fairchild (ON Semiconductor) |
POWER FIELD-EFFECT TRANSISTOR, 7 |
In Stock: 23,853 $1.06000 |
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IPA60R280E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A TO220-FP |
In Stock: 0 $1.56332 |
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SIHP17N80E-BE3Vishay / Siliconix |
MOSFET N-CH 800V 15A TO220AB |
In Stock: 1,000 $5.08000 |
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TSM4N80CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 4A ITO220AB |
In Stock: 0 $1.02195 |
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2SK1589-T1B-ATRenesas Electronics America |
SMALL SIGNAL N-CHANNEL MOSFET |
In Stock: 85,544 $0.15000 |
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2SK2943Sanken Electric Co., Ltd. |
MOSFET N-CH 900V 3A TO220F |
In Stock: 0 $1.59000 |
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FDS8449-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8SOIC |
In Stock: 1,295 $1.11000 |
