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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Driven Configuration: | Low-Side |
| Channel Type: | Independent |
| Number of Drivers: | 2 |
| Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
| Voltage - Supply: | 4.5V ~ 18V |
| Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
| Current - Peak Output (Source, Sink): | 2A, 2A |
| Input Type: | Inverting |
| High Side Voltage - Max (Bootstrap): | - |
| Rise / Fall Time (Typ): | 12ns, 15ns |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOIC |
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|---|---|---|---|
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TC4428VPARoving Networks / Microchip Technology |
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TPS2829DBVRG4Texas Instruments |
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ISL6610CBZ-INTIntersil (Renesas Electronics America) |
BUFFER/INVERTER BASED MOSFET DRI |
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