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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150 V |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 42mOhm @ 21A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 40 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1750 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 144W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-262 |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
2SK1119(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 1000V 4A TO220AB |
In Stock: 0 $0.00000 |
 |
STE250NS10STMicroelectronics |
MOSFET N-CH 100V 220A ISOTOP |
In Stock: 0 $0.00000 |
 |
SPB07N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO263-3 |
In Stock: 0 $0.00000 |
 |
NVB190N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A D2PAK-3 |
In Stock: 0 $0.00000 |
 |
SIA430DJ-T4-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12A/12A PPAK |
In Stock: 0 $0.00000 |
 |
APT15F60SMicrosemi |
MOSFET N-CH 600V 16A D3PAK |
In Stock: 0 $0.00000 |
 |
IPI100N08N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 70A TO262-3 |
In Stock: 0 $0.00000 |
 |
IRFBC40LCSVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
In Stock: 0 $0.00000 |
 |
IPU105N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 35A TO251-3 |
In Stock: 0 $0.00000 |
 |
STP8NM60NSTMicroelectronics |
MOSFET N-CH 600V 7A TO220AB |
In Stock: 0 $0.00000 |
