Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 22mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 57 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
IRFR3504ZTRLIR (Infineon Technologies) |
MOSFET N-CH 40V 42A DPAK |
In Stock: 0 $0.00000 |
![]() |
PH16030L,115NXP Semiconductors |
MOSFET N-CH 30V 38A LFPAK56 |
In Stock: 0 $0.00000 |
![]() |
STU12N65M5STMicroelectronics |
MOSFET N-CH 650V 8.5A IPAK |
In Stock: 0 $0.00000 |
![]() |
SI2335DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 3.2A SOT23-3 |
In Stock: 0 $0.00000 |
![]() |
SI4866BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 21.5A 8SO |
In Stock: 0 $0.00000 |
![]() |
IPB12CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 67A D2PAK |
In Stock: 0 $0.00000 |
![]() |
HUF76629D3ST-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A TO252 |
In Stock: 0 $0.00000 |
![]() |
STB30NM50NSTMicroelectronics |
MOSFET N-CH 500V 27A D2PAK |
In Stock: 0 $0.00000 |
![]() |
FQI12N50TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12.1A I2PAK |
In Stock: 0 $0.00000 |
![]() |
IPS118N10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 75A TO251-3 |
In Stock: 0 $0.00000 |