Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 130 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.75W (Ta), 120W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
IRLR3303TRIR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |
In Stock: 0 $0.00000 |
![]() |
STD50NH02L-1STMicroelectronics |
MOSFET N-CH 24V 50A I-PAK |
In Stock: 0 $0.00000 |
![]() |
IRL5602STRLIR (Infineon Technologies) |
MOSFET P-CH 20V 24A D2PAK |
In Stock: 0 $0.00000 |
![]() |
RJL6013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
In Stock: 0 $0.00000 |
![]() |
IPB048N06LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A D2PAK |
In Stock: 0 $0.00000 |
![]() |
SIHW23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO247AD |
In Stock: 0 $0.00000 |
![]() |
STW25N95K3STMicroelectronics |
MOSFET N-CH 950V 22A TO247 |
In Stock: 0 $0.00000 |
![]() |
NTB5404NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 167A D2PAK |
In Stock: 0 $0.00000 |
![]() |
IRF640STMicroelectronics |
MOSFET N-CH 200V 18A TO220AB |
In Stock: 0 $0.00000 |
![]() |
BUK7628-100A/C,118NXP Semiconductors |
MOSFET N-CH 100V 47A D2PAK |
In Stock: 0 $0.00000 |