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PDTB123TS,126

PDTB123TS,126

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Manufacturer Part
PDTB123TS,126
Manufacturer
NXP Semiconductors
Description
TRANS PREBIAS PNP 500MW TO92-3
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-
InStock
8331
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tape & Box (TB)
Part Status:Obsolete
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500 mW
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:TO-92-3

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