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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Rds On (Max) @ Id, Vgs: | 100mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 105 nC @ 20 V |
| Vgs (Max): | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 270W (Tc) |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | HiP247™ |
| Package / Case: | TO-247-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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BSB881N03LX3GXUMA1IR (Infineon Technologies) |
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2SK3404-Z-E1-AZRenesas Electronics America |
POWER FIELD-EFFECT TRANSISTOR |
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IPB097N08N3GATMA1IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
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IRF9542 |
P-CHANNEL POWER MOSFET |
In Stock: 497 $1.64000 |
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H5N3301LSTL-ERenesas Electronics America |
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In Stock: 2,000 $1.59000 |
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In Stock: 0 $0.90000 |
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RJK03P7DPA-WS#J5ARenesas Electronics America |
N-CHANNEL POWER MOSFET |
In Stock: 2,950 $0.68000 |
