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| Type | Description |
|---|---|
| Series: | * |
| Package: | Bulk |
| Part Status: | Active |
| Transistor Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | - |
| Frequency - Transition: | - |
| Noise Figure (dB Typ @ f): | - |
| Gain: | - |
| Power - Max: | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | - |
| Current - Collector (Ic) (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
|
BLF7G22L-130112NXP Semiconductors |
RF POWER TRANSISTORS |
In Stock: 21 $80.90000 |
|
MRF6V3090NBR5578NXP Semiconductors |
RF POWER UHF BAND N-CHANNEL FET |
In Stock: 0 $55.81000 |
|
BFR 360L3E6765IR (Infineon Technologies) |
LOW-NOISE TRANSISTOR |
In Stock: 15,000 $0.08000 |
|
BFP 183 E7764 |
RF BIPOLAR TRANSISTOR |
In Stock: 3,000 $0.06000 |
|
NESG2021M16-T3-ARenesas Electronics America |
RF SMALL SIGNAL TRANSISTOR |
In Stock: 20,000 $0.40000 |
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BFP 740 H6327 |
RF TRANSISTOR, X BAND, NPN |
In Stock: 1,966 $0.15000 |
|
BFP 182W H6327IR (Infineon Technologies) |
RF BIPOLAR TRANSISTOR |
In Stock: 6,000 $0.06000 |
|
2SC2839E-SPA-ACSanyo Semiconductor/ON Semiconductor |
NPN EPITAXIAL PLANAR SILICON |
In Stock: 0 $0.04000 |
|
HSG2001VF-01TL-ERenesas Electronics America |
NPN HIGH FREQPOWER AMP |
In Stock: 468,000 $0.18000 |
|
BLF6G20LS-180RN112NXP Semiconductors |
RF POWER TRANSISTORS |
In Stock: 10 $78.18000 |
