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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | - |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 17A |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 65mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
|
N0607N#YWRenesas Electronics America |
MOSFET N-CHANNEL |
In Stock: 0 $0.00000 |
|
BUK9222-100EJNexperia |
MOSFET N-CH 100V DPAK |
In Stock: 0 $0.00000 |
|
NVMFS4C308NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 88A DPAK |
In Stock: 0 $0.00000 |
|
2SK3408-T1B-ATRenesas Electronics America |
MOSFET N-CH 43V 1A SC96-3 |
In Stock: 0 $0.00000 |
|
64-2144PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 9.3A D2PAK |
In Stock: 0 $0.00000 |
|
RJK0660DPA-WS#J5ARenesas Electronics America |
IGBT |
In Stock: 0 $0.00000 |
|
JANTXV2N7225UMicrosemi |
MOSFET N-CH 200V 27.4A TO267AB |
In Stock: 0 $0.00000 |
|
OT419QWeEn Semiconductors Co., Ltd |
OT419/SIL3P/STANDARD MARKING * |
In Stock: 0 $0.00000 |
|
SPP04N50C3XKSA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
In Stock: 0 $0.00000 |
|
AO3401AL_DELTAAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V SOT23 |
In Stock: 0 $0.00000 |
