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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| IGBT Type: | NPT |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 50 A |
| Current - Collector Pulsed (Icm): | 150 A |
| Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 50A |
| Power - Max: | - |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | 43ns/130ns |
| Test Condition: | 300V, 50A, 3.3Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
|
GT50J121(Q)Toshiba Electronic Devices and Storage Corporation |
IGBT 600V 50A 240W TO3P LH |
In Stock: 0 $0.00000 |
|
SIGC42T60NCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
In Stock: 0 $0.00000 |
|
IRGC100B60KBIR (Infineon Technologies) |
IGBT CHIP |
In Stock: 0 $0.00000 |
|
IGC10T65U8QX1SA1IR (Infineon Technologies) |
IGBT CHIP |
In Stock: 0 $0.00000 |
|
SIGC18T60SNCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
In Stock: 0 $0.00000 |
|
PCISL9R860WSanyo Semiconductor/ON Semiconductor |
IGBT PCISL9R860W |
In Stock: 0 $0.00000 |
|
IRG7PK42UD1MPBFIR (Infineon Technologies) |
IGBT 1200V DIE |
In Stock: 0 $0.00000 |
|
SIGC10T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 20A WAFER |
In Stock: 0 $0.00000 |
|
IRG7CH28UEDIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
In Stock: 0 $0.00000 |
|
SIGC156T60NR2CX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
In Stock: 0 $0.00000 |
