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Unveiling the Marvels of MMBF170LT3G Transistor
- Part No.:
- MMBF170LT3G
- Manufacturer:
- onsemi
- Package:
- TO-236-3, SC-59, SOT-23-3
- Description:
- MOSFET N-CH 60V 500MA SOT23-3
- Payment:
- Shipping:
Inventory:8,370
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Article Details
The MMBF170LT3G is a high - performance transistor that stands out in the realm of electronic components. Engineered with precision, it brings a set of features that make it a valuable asset in numerous electronic circuits.
Electrical Specifications
The MMBF170LT3G exhibits remarkable current - gain characteristics. It offers a substantial current gain factor, enabling it to effectively amplify weak electrical signals. This property makes it an excellent choice for small - signal amplification tasks. Whether it's in audio pre - amplifiers, where the initial audio signals from a microphone need to be boosted to a usable level, or in radio - frequency (RF) circuits for signal strengthening, the MMBF170LT3G delivers consistent performance.
Another key aspect is its low noise figure. In electronic systems where signal purity is crucial, such as in communication receivers, the MMBF170LT3G's low noise operation ensures that the amplified signals are free from unwanted noise interference. This allows for clear and accurate signal processing, enhancing the overall quality of the transmitted or received data.
In terms of voltage handling, it is designed to operate within a specific voltage range. The transistor can withstand a certain collector - emitter voltage, which is vital for applications that require it to switch or control voltage levels in a circuit. This voltage - handling capability also contributes to its stability during operation, even in circuits with fluctuating power supplies.
Package and Physical Attributes
Housed in a compact surface - mount package, the MMBF170LT3G is well - suited for modern printed circuit board (PCB) designs. The small footprint of the package saves valuable space on the PCB, enabling the integration of more components in a limited area. This is particularly beneficial in portable electronic devices, where miniaturization is a key requirement. Additionally, the package design provides good mechanical stability, protecting the internal semiconductor die from mechanical stress during handling and operation.
Applications
In the consumer electronics domain, the MMBF170LT3G is commonly used in wireless earbuds and headphones. Here, it plays a crucial role in the audio amplification circuitry, ensuring high - quality sound output by effectively amplifying the low - level audio signals from the digital - to - analog converter.
In the field of Internet of Things (IoT) devices, the MMBF170LT3G can be found in sensor nodes. These nodes often require signal amplification for the data collected by various sensors, such as temperature or humidity sensors. The transistor's ability to amplify weak sensor signals while maintaining low noise levels is essential for accurate data transmission and processing in IoT applications.
Overall, the MMBF170LT3G transistor combines excellent electrical performance, a compact package, and broad application versatility, making it an essential component in the modern electronics ecosystem.
MMBF170LT3G Specifications
- Attributes
- Property Value
- Manufacturer
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Part Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C:
- 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 200mA, 10V
- Mounting Style:
- Surface Mount
- Vgs(th) (Max) @ Id:
- 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Drain to Source Voltage (Vdss):
- 60 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60 pF @ 10 V
- Qualification:
- -
- FET Feature:
- -
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Grade:
- -
- Power Dissipation (Max):
- 225mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
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