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FETs, MOSFETs

Manufacturer	Series	Package/Case	Packaging	Part Status	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Style	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Feature	Supplier Device Package	Grade	Power Dissipation (Max)	Operating Temperature
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Part Status	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Style	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Feature	Supplier Device Package	Grade	Power Dissipation (Max)	Operating Temperature
FDP023N08B 75V N-CHANNEL MOSFET Fairchild Semiconductor	7,556	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDG315N 2A, 30V, N-CHANNEL, MOSFET Fairchild Semiconductor	3,514	-	RFQ	Datasheet	PowerTrench®	6-TSSOP, SC-88, SOT-363	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	4.5V, 10V	120mOhm @ 2A, 10V	Surface Mount	3V @ 250µA	4 nC @ 5 V	30 V	±20V	220 pF @ 15 V	-	-	SC-88 (SC-70-6)	-	750mW (Ta)	-55°C ~ 150°C (TJ)
PMN70XPEA115 MOSFET P-CH 20V 3.2A NXP USA Inc.	8,902	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFP048NPBF HEXFET POWER MOSFET International Rectifier	7,970	-	RFQ	Datasheet	HEXFET®	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	10V	16mOhm @ 37A, 10V	Through Hole	4V @ 250µA	89 nC @ 10 V	55 V	±20V	1900 pF @ 25 V	-	-	TO-247AC	-	140W (Tc)	-55°C ~ 175°C (TJ)
FDB8880 11A, 30V, 0.0145OHM, N-CHANNEL, Fairchild Semiconductor	3,142	-	RFQ	Datasheet	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 54A (Tc)	4.5V, 10V	11.6mOhm @ 40A, 10V	Surface Mount	2.5V @ 250µA	29 nC @ 10 V	30 V	±20V	1240 pF @ 15 V	-	-	TO-263AB	-	55W (Tc)	-55°C ~ 175°C (TJ)
NX3008PBKMB,315 MOSFET P-CH 30V 300MA DFN1006B-3 NXP USA Inc.	5,803	-	RFQ	Datasheet	TrenchMOS™	SC-101, SOT-883	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	300mA (Ta)	-	4.1Ohm @ 200mA, 4.5V	Surface Mount	1.1V @ 250µA	0.72 nC @ 4.5 V	30 V	±8V	46 pF @ 15 V	-	-	DFN1006B-3	-	360mW (Ta), 2.7W (Tc)	-55°C ~ 150°C (TJ)
IPP60R380P6 POWER FIELD-EFFECT TRANSISTOR Infineon Technologies	9,589	-	RFQ	Datasheet	CoolMOS™ P6	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	10.6A (Tc)	-	-	Through Hole	-	-	-	-	-	-	-	PG-TO220-3	-	-	-55°C ~ 150°C (TJ)
IRF3709SPBF HEXFET SMPS POWER MOSFET International Rectifier	4,536	-	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	41 nC @ 5 V	30 V	±20V	2672 pF @ 16 V	-	-	D2PAK	-	3.1W (Ta), 120W (Tc)	-55°C ~ 150°C (TJ)
TN2130K1-G-VAO MOSFET N-CH 300V 85MA SOT23-3 Microchip Technology	7,914	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	85mA (Tj)	4.5V	25Ohm @ 120mA, 4.5V	Surface Mount	2.4V @ 1mA	-	300 V	±20V	50 pF @ 25 V	-	-	SOT-23-3	-	360mW (Ta)	-55°C ~ 150°C (TA)
IRF830 MOSFET N-CH 500V 4.5A TO220-3 Harris Corporation	7,963	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	-	1.5Ohm @ 2.5A, 10V	Through Hole	4V @ 250µA	32 nC @ 10 V	500 V	±20V	600 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
TP5335K1-G-VAO MOSFET P-CH 350V 85MA SOT23-3 Microchip Technology	6,071	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	85mA (Tj)	4.5V, 10V	30Ohm @ 200mA, 10V	Surface Mount	2.4V @ 1mA	-	350 V	±20V	110 pF @ 25 V	-	-	SOT-23-3	-	360mW (Ta)	-55°C ~ 150°C (TJ)
IRFI4228PBF-IR HEXFET N-CHANNEL POWER MOSFET International Rectifier	4,470	-	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	16mOhm @ 20A, 10V	Through Hole	5V @ 250µA	110 nC @ 10 V	150 V	±30V	4560 pF @ 25 V	-	-	TO-220AB Full-Pak	-	46W (Tc)	-40°C ~ 150°C (TJ)
IRFC7314B MOSFET P-CH 20V 5.3A 8-SOIC Infineon Technologies	2,134	-	RFQ	Datasheet	-	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	±12V	-	-	-	-	-	-	-
IRF7416TRPBF-1 MOSFET P-CH 30V 10A 8SO Infineon Technologies	3,262	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	-	20mOhm @ 5.6A, 10V	Surface Mount	2.04V @ 250µA	92 nC @ 10 V	30 V	±20V	1700 pF @ 25 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRLML2803TRPBF-1 MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	7,907	-	RFQ	Datasheet	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	-	250mOhm @ 910mA, 10V	Surface Mount	1V @ 250µA	5 nC @ 10 V	30 V	±20V	85 pF @ 25 V	-	-	Micro3™/SOT-23	-	540mW (Ta)	-55°C ~ 150°C (TJ)
IRF7410TRPBF-1 MOSFET P-CH 12V 16A 8SO Infineon Technologies	3,751	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	16A (Ta)	-	7mOhm @ 16A, 4.5V	Surface Mount	900mV @ 250µA	91 nC @ 4.5 V	12 V	±8V	8676 pF @ 10 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
NP90N04VDK-E1-AY POWER DEVICE AUTOMOTIVE MOS MP-3 Renesas Electronics Corporation	4,293	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	2.8mOhm @ 45A, 10V	Surface Mount	2.5V @ 250µA	102 nC @ 10 V	40 V	±20V	5850 pF @ 25 V	AEC-Q101	-	TO-252 (MP-3ZP)	Automotive	1.2W (Ta), 147W (Tc)	175°C
STL92N10F7AG MOSFET N-CH 100V 16A POWERFLAT STMicroelectronics	8,285	-	RFQ	Datasheet	STripFET™	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	9.5Ohm @ 8A, 10V	Surface Mount	4.5V @ 250µA	45 nC @ 10 V	100 V	±20V	3100 pF @ 50 V	AEC-Q101	-	PowerFlat™ (5x6)	Automotive	5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
IPL60R285P7AUMA1 MOSFET N-CH 600V 13A 4VSON Infineon Technologies	5,930	-	RFQ	Datasheet	CoolMOS™ P7	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	285mOhm @ 3.8A, 10V	Surface Mount	4V @ 190µA	18 nC @ 10 V	600 V	±20V	761 pF @ 400 V	-	-	PG-VSON-4	-	59W (Tc)	-40°C ~ 150°C (TJ)
STD10NM60ND MOSFET N-CH 600V 8A DPAK STMicroelectronics	2,100	-	RFQ	Datasheet	FDmesh™ II	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	600mOhm @ 4A, 10V	Surface Mount	5V @ 250µA	20 nC @ 10 V	600 V	±25V	577 pF @ 50 V	-	-	DPAK	-	70W (Tc)	-55°C ~ 150°C (TJ)

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