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FETs, MOSFETs

Manufacturer	Series	Package/Case	Packaging	Part Status	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Style	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Feature	Supplier Device Package	Grade	Power Dissipation (Max)	Operating Temperature
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Part Status	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Style	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Feature	Supplier Device Package	Grade	Power Dissipation (Max)	Operating Temperature
PSMN3R5-30LL,115 MOSFET N-CH 30V 40A 8DFN NXP USA Inc.	2,131	-	RFQ	Datasheet	-	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	3.6mOhm @ 10A, 10V	Surface Mount	2.15V @ 1mA	37 nC @ 10 V	30 V	±20V	2061 pF @ 15 V	-	-	8-DFN3333 (3.3x3.3)	-	71W (Tc)	-55°C ~ 150°C (TJ)
TSM4ND65CI MOSFET N-CH 650V 4A ITO220 Taiwan Semiconductor Corporation	1,845	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	2.6Ohm @ 1.2A, 10V	Through Hole	3.8V @ 250µA	16.8 nC @ 10 V	650 V	±30V	596 pF @ 50 V	-	-	ITO-220	-	41.6W (Tc)	-55°C ~ 150°C (TJ)
AO3457 MOSFET P-CH 30V 4.3A SOT23-3 Alpha & Omega Semiconductor Inc.	6,947	-	RFQ	Datasheet	-	3-SMD, SOT-23-3 Variant	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.3A (Ta)	4.5V, 10V	48mOhm @ 4.3A, 10V	Surface Mount	2.4V @ 250µA	20 nC @ 10 V	30 V	±20V	520 pF @ 15 V	-	-	SOT-23-3	-	1.4W (Ta)	-55°C ~ 150°C (TJ)
PSMN3R8-30LL,115 MOSFET N-CH 30V 40A 8DFN NXP USA Inc.	6,906	-	RFQ	Datasheet	-	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	3.7mOhm @ 10A, 10V	Surface Mount	2.15V @ 1mA	38 nC @ 10 V	30 V	±20V	2085 pF @ 15 V	-	-	8-DFN3333 (3.3x3.3)	-	69W (Tc)	-55°C ~ 150°C (TJ)
FDP053N08B-F102 MOSFET N-CH 80V 75A TO220-3 onsemi	1,520	-	RFQ	Datasheet	PowerTrench®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	5.3mOhm @ 75A, 10V	Through Hole	4.5V @ 250µA	85 nC @ 10 V	80 V	±20V	5960 pF @ 40 V	-	-	TO-220-3	-	146W (Tc)	-55°C ~ 175°C (TJ)
AO3485 MOSFET P-CH 20V 4A SOT23-3 Alpha & Omega Semiconductor Inc.	7,225	-	RFQ	Datasheet	-	3-SMD, SOT-23-3 Variant	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	1.5V, 4.5V	41mOhm @ 4A, 4.5V	Surface Mount	900mV @ 250µA	15 nC @ 4.5 V	20 V	±8V	751 pF @ 10 V	-	-	SOT-23-3	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
PJMD900N60EC_L2_00001 600V SUPER JUNCTION MOSFET Panjit International Inc.	5,835	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	900mOhm @ 2.3A, 10V	Surface Mount	4V @ 250µA	8.8 nC @ 10 V	600 V	±30V	310 pF @ 400 V	-	-	TO-252AA	-	47.5W (Tc)	-55°C ~ 150°C (TJ)
AUIRF2804L-313TRL MOSFET N-CH 40V 195A TO262 Infineon Technologies	5,284	-	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	2.3mOhm @ 75A, 10V	Through Hole	4V @ 250µA	240 nC @ 10 V	40 V	±20V	6450 pF @ 25 V	AEC-Q101	-	TO-262-3	Automotive	300W (Tc)	-55°C ~ 175°C (TJ)
PJMP990N65EC_T0_00001 650V SUPER JUNCTION MOSFET Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.7A (Tc)	10V	990mOhm @ 2A, 10V	Through Hole	4V @ 250µA	9.7 nC @ 10 V	650 V	±30V	306 pF @ 400 V	-	-	TO-220AB-L	-	47.5W (Tc)	-55°C ~ 150°C (TJ)
AUXYBFP3306 MOSFET N-CH 60V TO-247AC Infineon Technologies	2,747	-	RFQ	Datasheet	-	-	Tube	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFSL4010-313TRL MOSFET N-CH 100V 180A TO262 Infineon Technologies	3,882	-	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	4.7mOhm @ 106A, 10V	Through Hole	4V @ 250µA	215 nC @ 10 V	100 V	±8V	9575 pF @ 50 V	AEC-Q101	-	TO-262-3	Automotive	375W (Tc)	-55°C ~ 175°C (TJ)
PMPB12EPX MOSFET P-CH 30V 7.9A DFN2020MD-6 Nexperia USA Inc.	9,171	-	RFQ	Datasheet	TrenchMOS™	6-UDFN Exposed Pad	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	7.9A (Ta)	4.5V, 10V	17.3mOhm @ 7.9A, 10V	Surface Mount	2V @ 250µA	39.9 nC @ 10 V	30 V	±20V	227 pF @ 15 V	-	-	DFN2020MD-6	-	1.7W (Ta), 13W (Tc)	-55°C ~ 150°C (TJ)
CMS01P10T-HF MOSFET P-CH 100V 1.2A SOT23-3 Comchip Technology	8,207	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	4.5V, 10V	650mOhm @ 1A, 10V	Surface Mount	2.5V @ 250µA	9.3 nC @ 10 V	100 V	±20V	513 pF @ 15 V	-	-	SOT-23-3	-	1W (Ta)	-55°C ~ 150°C (TJ)
SCTWA35N65G2VAG SICFET N-CH 650V 45A TO247 STMicroelectronics	3,522	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	45A (Tc)	18V, 20V	72mOhm @ 20A, 20V	Through Hole	3.2V @ 1mA	73 nC @ 20 V	650 V	+20V, -5V	1370 pF @ 400 V	-	-	TO-247 Long Leads	-	208W (Tc)	-55°C ~ 175°C (TJ)
NVMFS4C03NT1G MOSFET N-CH 30V 31.4A/143A 5DFN onsemi	1,350	-	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	31.4A (Ta), 143A (Tc)	4.5V, 10V	2.1mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	45.2 nC @ 10 V	30 V	±20V	3071 pF @ 15 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.71W (Ta), 77W (Tc)	-55°C ~ 175°C (TJ)
IRF8721TRPBF-1 MOSFET N-CH 30V 14A 8SO Infineon Technologies	6,992	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	4.5V, 10V	8.5mOhm @ 14A, 10V	Surface Mount	2.35V @ 25µA	12 nC @ 4.5 V	30 V	±20V	1040 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRF7456TRPBF-1 MOSFET N-CH 20V 16A 8SO Infineon Technologies	6,396	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta)	2.8V, 10V	6.5mOhm @ 16A, 10V	Surface Mount	2V @ 250µA	62 nC @ 5 V	20 V	±12V	3640 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRLML0100TRPBF-1 MOSFET N-CH 100V 1.6A SOT23 Infineon Technologies	9,001	-	RFQ	Datasheet	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.6A (Ta)	4.5V, 10V	220mOhm @ 1.6A, 10V	Surface Mount	2.5V @ 25µA	2.5 nC @ 4.5 V	100 V	±16V	290 pF @ 25 V	-	-	Micro3™/SOT-23	-	1.3W (Ta)	-55°C ~ 150°C (TJ)
IRFC4019EB MOSFET N-CH 150V 17A DIE Infineon Technologies	7,819	-	RFQ	Datasheet	HEXFET®	Die	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A	-	-	Surface Mount	-	-	150 V	-	-	-	-	Die	-	-	-
IRF8113TRPBF-1 MOSFET N-CH 30V 17.2A 8SO Infineon Technologies	2,092	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17.2A (Ta)	4.5V, 10V	5.6mOhm @ 17.2A, 10V	Surface Mount	2.2V @ 250µA	36 nC @ 4.5 V	30 V	±20V	2910 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)

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