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| Type | Description |
|---|---|
| Series: | * |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 250mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 65 nC @ 10 V |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 2910 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 [B] |
| Package / Case: | TO-247-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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FCD600N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 6A DPAK |
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MOSFET N-CH 100V 5.8A DPAK |
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SIS184DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 17.4A/65.3A PPAK |
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IPP60R180C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A TO220-3 |
In Stock: 96 $3.12000 |
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FDD4685Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 8.4A/32A DPAK |
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BSC100N06LS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 12A/50A TDSON |
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SMMBFJ310LT1Sanyo Semiconductor/ON Semiconductor |
RF N-CHANNEL, JUNCTION FET |
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PMV100XPEARNexperia |
MOSFET P-CH 20V 2.4A TO236AB |
In Stock: 2,829 $0.37000 |
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TK42E12N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 120V 88A TO-220 |
In Stock: 0 $0.89813 |
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IRLU2905PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 42A I-PAK |
In Stock: 1,450 $0.60000 |
