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Microchip 3.3 kV HV-D3 mSiC Power Modules for Solid-State Transformers

7/21/2026 10:17:56 AM

Microchip 3.3 kV HV-D3 mSiC power module for solid-state transformer power conversion

Microchip has introduced 3.3 kV HV-D3 mSiC power modules for solid-state transformers and other high-voltage power-conversion equipment. The release combines silicon carbide MOSFETs and Schottky diodes in an industry-standard 62 mm module format, giving power-stage teams a defined starting point for medium-voltage designs that need high isolation, thermal performance, and fewer series-connected devices.

Contents

What the released module platform includes

The HV-D3 family integrates 3.3 kV mSiC MOSFETs and Schottky diodes in a 62 mm package. Microchip states that the package supports 6 kV isolation, CTI 600-rated materials, and extended creepage distances. These package-level details matter before schematic selection because they affect the insulation path, series connection strategy, and mechanical review around the high-voltage bus.

For a solid-state transformer, the important design question is not only whether a 3.3 kV switch is suitable. The team must also confirm the required blocking margin, insulation coordination, transient conditions, cooling path, and gate-drive arrangement for the complete conversion stage.

Isolation and thermal checks for a first design pass

Microchip uses a silicon nitride substrate in the released modules to support thermal conductivity and power-cycling capability. That makes the thermal stack a design-in item rather than a later packaging task. Start with the expected switching loss, conduction loss, coolant or heatsink interface, module mounting pressure, and the temperature range at each operating point.

The 6 kV isolation capability and extended creepage distances should be checked against the system insulation requirement, not used as a substitute for a complete isolation review. Include the busbar geometry, connector clearance, enclosure environment, and the applicable safety standard in the same review.

Topology and current-range fit

The release covers half-bridge and common-source configurations, with and without anti-parallel Schottky diodes, for applications in the 100 A to 300 A range. This gives engineers a way to compare topology needs before selecting a module variant. In a hard-switched stage, review diode behavior, switching energy, gate-loop inductance, and the expected dv/dt. In a soft-switched stage, verify the commutation path and the device behavior across the planned current range.

Microchip positions the mSiC technology for both hard-switched and soft-switched topologies. The final device decision still needs the applicable datasheet limits, application conditions, and a power-stage loss calculation.

Where the modules fit

Microchip highlights solid-state transformers for AI data centers as a primary application. The same release also identifies megawatt charging infrastructure for heavy-duty vehicles, rail auxiliary power, medium-voltage motor drives, industrial power equipment, and defense power systems. These applications share a need for high-voltage conversion, but they do not share the same protection, isolation, or thermal constraints.

For an SST concept, use the module choice together with the grid interface, DC-link arrangement, transformer or resonant stage, current sensing, protection timing, and fault-energy analysis. A module family announcement is a useful platform signal; it is not a complete system qualification.

Source and design confirmation

Microchip announced the 3.3 kV HV-D3 mSiC power modules on May 26, 2026. Confirm the selected configuration, anti-parallel diode option, current range, thermal interface, isolation requirement, and all application-specific limits against the current manufacturer documentation before committing a part number.

Official source: Microchip Launches 3.3 kV HV-D3 mSiC Power Modules

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